triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information june 16, 2004 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. wideband low noise amplifier TGA4830-EPU key features and performance ? dc - 45ghz frequency range ? 13db gain @ 20ghz ? 15db return loss @ 20ghz ? 11.5dbm typical p1db ? 3.2db typical noise figure ? 40gbps data rate ? > 20db gain control ?0.15 m phemt 3mi technology ? 5v, 50ma bi as condition ? chip dimensions: 1.79 x 1.00 x 0.10 mm (0.070 x 0.039 x 0.004 inches) primary applications ? test equipment ? ultra wideband ? ew systems ? fiberoptic systems measured performance v + = 5v, i + = 50ma 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 5 10 return loss (db) s21 s11 s22 product description the triquint TGA4830-EPU is a medium power wideband low noise amplifier which operates from dc to 45 ghz. typical small signal gain is 13db with >20db agc range. typical input and output return loss is 15db. the TGA4830-EPU provides 11.5 dbm of typical output power at 1 db gain compression and a 3.2db noise figure. rf ports are dc coupled enabling the user to customize system corner frequencies. the TGA4830-EPU is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. it is also an excellent choice for 40gb/s nrz applications. the tga4830 is capable of driving an electro-absorptive optical modulator (eam) with electrical non-return to zero (nrz) data. in addition, the tga4830 may also be used as a predriver or a receive gain block. 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35 40 frequency (ghz) noise figure (db)
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information june 16, 2004 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table i maximum ratings symbol parameter 1/ value notes v + v d positive supply voltage biased thru on-chip termination biased thru rf out 10 v 7 v 2/, 3/ i + i d positive supply current biased thru on-chip termination biased thru rf out 72 ma 180m a 3/ p d + p d power dissipation biased thru on-chip termination biased thru rf out 1.1 w 0.8 w 3/ 4 / v g gate voltage range -3v to +1v |i g | gate current 10 ma v ctrl control voltage range +5v to (v d ? v ctrl 8v) 5/ |i ctrl | control current 10 ma p in input continuous wave power tbd v in 40gbps prbs voltage input tbd t ch channel temperature 150 c 6/ t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings represent the maxi mum operable values for this device. 2/ assure v d ? v ctrl 8v. compute v d as follows: v d = v + - i + * 40 3/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 4/ when operated at this bias conditi on with a base plate temperature of 70 0 c, the median life is tbd hours. 5/ assure v ctrl never exceeds v d during bias up and bias down sequences. also, v ctrl must never exceed 5v during normal operation. 6/ junction operating temperature will directly affect the device mean time to failure (mttf). for maximum life it is reco mmended that junction temperatures be maintained at the lowest possible levels TGA4830-EPU
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information june 16, 2004 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table iii rf characterization table (t a = 25 c, nominal) (v + = 5v, i + = 50ma) symbol parameter test conditions typ units notes gain small signal gain f = 1 ? 30 ghz 13 db bw small signal 3db bandwidth 45 ghz irl input return loss f = 1 ? 30 ghz 12 db orl output return loss f = 1 ? 30 ghz 15 db p1db output power @ 1db gain compression f = 1 ? 25 ghz 11.5 dbm nf noise figure f = 1 ? 40 ghz 3.2 db note: table iii lists the rf characteristics of typical devices as determined by fixtured measurements. TGA4830-EPU table ii thermal information parameter test conditions t ch ( c) r jc ( c/w) mttf (hrs) r jc thermal resistance (channel to backside of carrier) v + = 5v i + = 50ma p diss = 0.25w t base = 70 c 82.3 49.2 9.1e+8 note: assumes eutectic attach using 1.5mil 80/20 ausn mounted to a 20mil cumo carrier at 70 c baseplate temperature. worst case conditions with no rf applied, 100% of dc power is dissipated.
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information june 16, 2004 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. preliminary data v + = 5v, i + = 50ma TGA4830-EPU 0 2 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) gain (db) -30 -25 -20 -15 -10 -5 0 0 5 10 15 20 25 30 35 40 45 50 frequency (ghz) return loss (db) s11 s22
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information june 16, 2004 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4830-EPU preliminary data v + = 5v, i + = 50ma 4 6 8 10 12 14 16 0 5 10 15 20 25 30 35 40 frequency (ghz) pout @ p1db (dbm) 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 35 40 frequency (ghz) noise figure (db)
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information june 16, 2004 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4830-EPU preliminary data v + = 5v, i + = 60ma, v in = 0.62v pp , v out = 2.25v pp
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information june 16, 2004 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. mechanical drawing TGA4830-EPU
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information june 16, 2004 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. chip assembly & bonding diagram gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4830-EPU additional biasing information: ? bias conditions: v + = 5.0 v, i + = 50 ma ? adjust vg1 for i + = 50 ma ? adjust vg2 for gain and eye crossing control. vg2 bias is optional. c bypassing effective lower frequency 020 mhz 0.01uf 4 mhz 0.1uf 250khz
triquint semiconductor texas phone: (972)994-8 465 fax: (972)994 8504 email: in fo-mmw@tqs.com web: www.triquint.com advance product information june 16, 2004 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c. (30 seconds maximum) ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? maximum stage temperature is 200 c. assembly process notes TGA4830-EPU
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